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Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

Author

Listed:
  • Dapan Li

    (City University of Hong Kong
    City University of Hong Kong)

  • Changyong Lan

    (City University of Hong Kong
    University of Electronic Science and Technology of China)

  • Arumugam Manikandan

    (National Tsing Hua University)

  • SenPo Yip

    (City University of Hong Kong
    City University of Hong Kong
    City University of Hong Kong)

  • Ziyao Zhou

    (City University of Hong Kong
    City University of Hong Kong)

  • Xiaoguang Liang

    (City University of Hong Kong
    City University of Hong Kong)

  • Lei Shu

    (City University of Hong Kong
    City University of Hong Kong)

  • Yu-Lun Chueh

    (National Tsing Hua University)

  • Ning Han

    (Chinese Academy of Sciences)

  • Johnny C. Ho

    (City University of Hong Kong
    City University of Hong Kong
    City University of Hong Kong)

Abstract

Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 -orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.

Suggested Citation

  • Dapan Li & Changyong Lan & Arumugam Manikandan & SenPo Yip & Ziyao Zhou & Xiaoguang Liang & Lei Shu & Yu-Lun Chueh & Ning Han & Johnny C. Ho, 2019. "Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires," Nature Communications, Nature, vol. 10(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-09606-y
    DOI: 10.1038/s41467-019-09606-y
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    Cited by:

    1. You Meng & Xiaocui Li & Xiaolin Kang & Wanpeng Li & Wei Wang & Zhengxun Lai & Weijun Wang & Quan Quan & Xiuming Bu & SenPo Yip & Pengshan Xie & Dong Chen & Dengji Li & Fei Wang & Chi-Fung Yeung & Chan, 2023. "Van der Waals nanomesh electronics on arbitrary surfaces," Nature Communications, Nature, vol. 14(1), pages 1-14, December.

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