Author
Listed:
- Gwangwoo Kim
(Ulsan National Institute of Science & Technology (UNIST))
- Sung-Soo Kim
(Seoul National University
Korea Institute of Science and Technology (KIST))
- Jonghyuk Jeon
(Seoul National University)
- Seong In Yoon
(Ulsan National Institute of Science & Technology (UNIST))
- Seokmo Hong
(UNIST)
- Young Jin Cho
(Konkuk University)
- Abhishek Misra
(University of Manchester
Indian Institute of Technology Madras)
- Servet Ozdemir
(University of Manchester)
- Jun Yin
(University of Manchester)
- Davit Ghazaryan
(University of Manchester
National Research University Higher School of Economics)
- Matthew Holwill
(University of Manchester)
- Artem Mishchenko
(University of Manchester)
- Daria V. Andreeva
(National University of Singapore)
- Yong-Jin Kim
(Institute of Basic Science (IBS))
- Hu Young Jeong
(UNIST Central Research Facilities (UCRF), UNIST)
- A-Rang Jang
(Ulsan National Institute of Science & Technology (UNIST)
UNIST)
- Hyun-Jong Chung
(Konkuk University)
- Andre K. Geim
(University of Manchester)
- Kostya S. Novoselov
(University of Manchester)
- Byeong-Hyeok Sohn
(Seoul National University)
- Hyeon Suk Shin
(Ulsan National Institute of Science & Technology (UNIST)
UNIST
Institute of Basic Science (IBS)
Low Dimensional Carbon Material Center, UNIST)
Abstract
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.
Suggested Citation
Gwangwoo Kim & Sung-Soo Kim & Jonghyuk Jeon & Seong In Yoon & Seokmo Hong & Young Jin Cho & Abhishek Misra & Servet Ozdemir & Jun Yin & Davit Ghazaryan & Matthew Holwill & Artem Mishchenko & Daria V. , 2019.
"Planar and van der Waals heterostructures for vertical tunnelling single electron transistors,"
Nature Communications, Nature, vol. 10(1), pages 1-9, December.
Handle:
RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-018-08227-1
DOI: 10.1038/s41467-018-08227-1
Download full text from publisher
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-018-08227-1. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.