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High-performance Raman quantum memory with optimal control in room temperature atoms

Author

Listed:
  • Jinxian Guo

    (East China Normal University
    Shanghai Jiao Tong University)

  • Xiaotian Feng

    (East China Normal University)

  • Peiyu Yang

    (East China Normal University)

  • Zhifei Yu

    (East China Normal University)

  • L. Q. Chen

    (East China Normal University)

  • Chun-Hua Yuan

    (East China Normal University)

  • Weiping Zhang

    (Shanghai Jiao Tong University
    Shanxi University)

Abstract

Quantum memories are essential for quantum information processing. Techniques have been developed for quantum memory based on atomic ensembles. The atomic memories through optical resonance usually suffer from the narrow-band limitation. The far off-resonant Raman process is a promising candidate for atomic memories due to broad bandwidths and high speeds. However, to date, the low memory efficiency remains an unsolved bottleneck. Here, we demonstrate a high-performance atomic Raman memory in 87Rb vapour with the development of an optimal control technique. A memory efficiency of above 82.0% for 6 ns~20 ns optical pulses is achieved. In particular, an unconditional fidelity of up to 98.0%, significantly exceeding the no-cloning limit, is obtained with the tomography reconstruction for a single-photon level coherent input. Our work marks an important advance of atomic memory towards practical applications in quantum information processing.

Suggested Citation

  • Jinxian Guo & Xiaotian Feng & Peiyu Yang & Zhifei Yu & L. Q. Chen & Chun-Hua Yuan & Weiping Zhang, 2019. "High-performance Raman quantum memory with optimal control in room temperature atoms," Nature Communications, Nature, vol. 10(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-018-08118-5
    DOI: 10.1038/s41467-018-08118-5
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