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Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Author

Listed:
  • Aitian Chen

    (Tsinghua University
    Collaborative Innovation Center of Quantum Matter
    King Abdullah University of Science and Technology)

  • Yan Wen

    (King Abdullah University of Science and Technology)

  • Bin Fang

    (Chinese Academy of Sciences)

  • Yuelei Zhao

    (King Abdullah University of Science and Technology)

  • Qiang Zhang

    (King Abdullah University of Science and Technology)

  • Yuansi Chang

    (Chinese Academy of Sciences)

  • Peisen Li

    (Tsinghua University
    National University of Defense Technology)

  • Hao Wu

    (Chinese Academy of Sciences)

  • Haoliang Huang

    (University of Science and Technology of China)

  • Yalin Lu

    (University of Science and Technology of China)

  • Zhongming Zeng

    (Chinese Academy of Sciences)

  • Jianwang Cai

    (Chinese Academy of Sciences)

  • Xiufeng Han

    (Chinese Academy of Sciences)

  • Tom Wu

    (King Abdullah University of Science and Technology)

  • Xi-Xiang Zhang

    (King Abdullah University of Science and Technology)

  • Yonggang Zhao

    (Tsinghua University
    Collaborative Innovation Center of Quantum Matter)

Abstract

Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field. Through strain-mediated magnetoelectric coupling, the electric field modifies the magnetic anisotropy of the free layer leading to its magnetization rotation so that the relative magnetization configuration of the magnetic tunnel junction can be efficiently modulated. Our findings offer significant fundamental insight into information storage using electric writing and magnetic reading and represent a crucial step towards low-power spintronic devices.

Suggested Citation

  • Aitian Chen & Yan Wen & Bin Fang & Yuelei Zhao & Qiang Zhang & Yuansi Chang & Peisen Li & Hao Wu & Haoliang Huang & Yalin Lu & Zhongming Zeng & Jianwang Cai & Xiufeng Han & Tom Wu & Xi-Xiang Zhang & Y, 2019. "Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling," Nature Communications, Nature, vol. 10(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-018-08061-5
    DOI: 10.1038/s41467-018-08061-5
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    Cited by:

    1. Hao Wu & Aitian Chen & Peng Zhang & Haoran He & John Nance & Chenyang Guo & Julian Sasaki & Takanori Shirokura & Pham Nam Hai & Bin Fang & Seyed Armin Razavi & Kin Wong & Yan Wen & Yinchang Ma & Guoqi, 2021. "Magnetic memory driven by topological insulators," Nature Communications, Nature, vol. 12(1), pages 1-7, December.

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