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Anomaly Detection and Degradation Prediction of MOSFET

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  • Li-Feng Wu
  • Yong Guan
  • Xiao-Juan Li
  • Jie Ma

Abstract

The MOSFET is an important power electronic transistor widely used in electrical systems. Its reliability has an effect on the performance of systems. In this paper, the failure models and mechanisms of MOSFETs are briefly analyzed. The on-resistance is the key failure precursor parameter representing the degree of degradation. Based on the experimental data, a nonlinear dual-exponential degradation model for MOSFETs is obtained. Then, we present an approach for MOSFET degradation state prediction using a strong tract filter based on the obtained degradation model. Lastly, the proposed algorithm is shown to perform effectively on experimental data. Thus, it can provide early warning and enhance the reliability of electrical systems.

Suggested Citation

  • Li-Feng Wu & Yong Guan & Xiao-Juan Li & Jie Ma, 2015. "Anomaly Detection and Degradation Prediction of MOSFET," Mathematical Problems in Engineering, Hindawi, vol. 2015, pages 1-5, June.
    • Handle: RePEc:hin:jnlmpe:573980
    DOI: 10.1155/2015/573980
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