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The Wavelength-Locking of High-Power 808 nm Semiconductor Laser

Author

Listed:
  • Hai-Xia Guo
  • Zai-Jin Li
  • Hui Li
  • Feng Gao
  • Hai-Bin Tang
  • Bao-Hua Shi
  • Yi Qu

Abstract

A distributed feedback (DFB) laser of 808 nm is produced in this paper whose optical power is 2 W, cavity length is 3 mm, and injecting width is 200 μ m. A second-order grating formed into an InGaP/GaAs/InGaP multilayer structure provides the optical distributed feedback. The holographic lithography method is adopted to make Bragg gratings in p-waveguide layer (Λ = 240 nm) of the GaAs epitaxial wafers. The best experimental conditions are determined by analyzing the surface morphology and three-dimensional holographic grating. In addition, the output power data and wavelength of the distributed feedback laser emitting at different temperatures are presented. And the wavelength varies with temperature at a rate of 0.062 nm/K. Finally, the conclusion is drawn that this kind of DFB laser has a better temperature stabilized wavelength and narrower line width.

Suggested Citation

  • Hai-Xia Guo & Zai-Jin Li & Hui Li & Feng Gao & Hai-Bin Tang & Bao-Hua Shi & Yi Qu, 2015. "The Wavelength-Locking of High-Power 808 nm Semiconductor Laser," Mathematical Problems in Engineering, Hindawi, vol. 2015, pages 1-4, August.
    • Handle: RePEc:hin:jnlmpe:450324
    DOI: 10.1155/2015/450324
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