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The Effect of a Hyperbolic Two-Temperature Model with and without Energy Dissipation in a Semiconductor Material

Author

Listed:
  • Faris Alzahrani

    (Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Department of Mathematics, King Abdulaziz University, Jeddah 21589, Saudi Arabia)

  • Ibrahim Abbas

    (Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Department of Mathematics, King Abdulaziz University, Jeddah 21589, Saudi Arabia
    Department of Mathematics, Faculty of Science, Sohag University, Sohag 82524, Egypt)

Abstract

In this work, the new model of photothermal and elastic waves, with and without energy dissipation, under a hyperbolic two-temperature model, is used to compute the displacement, carrier density, thermodynamic temperature, conductive temperature and stress in a semiconductor medium. The medium is considered in the presence of the coupling of plasma and thermoelastic waves. To get the complete analytical expressions of the main physical fields, Laplace transforms and the eigenvalue scheme are used. The outcomes are presented graphically to display the differences between the classical two-temperature theory and the new hyperbolic two-temperature theory, with and without energy dissipation. Based on the numerical results, the hyperbolic two-temperature thermoelastic theory offers a finite speed of mechanical waves and propagation of thermal waves.

Suggested Citation

  • Faris Alzahrani & Ibrahim Abbas, 2020. "The Effect of a Hyperbolic Two-Temperature Model with and without Energy Dissipation in a Semiconductor Material," Mathematics, MDPI, vol. 8(10), pages 1-11, October.
    • Handle: RePEc:gam:jmathe:v:8:y:2020:i:10:p:1711-:d:423758
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