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Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

Author

Listed:
  • Mitsuoki Hishida

    (Automotive & Industrial Systems Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan)

  • Takeyuki Sekimoto

    (Advanced Research Division, Panasonic Corporation, Seika, Kyoto 619-0237, Japan)

  • Mitsuhiro Matsumoto

    (Eco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, Japan)

  • Akira Terakawa

    (Eco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, Japan)

Abstract

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity ( X c ) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.

Suggested Citation

  • Mitsuoki Hishida & Takeyuki Sekimoto & Mitsuhiro Matsumoto & Akira Terakawa, 2016. "Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency," Energies, MDPI, vol. 9(1), pages 1-11, January.
    • Handle: RePEc:gam:jeners:v:9:y:2016:i:1:p:42-:d:62135
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