IDEAS home Printed from https://ideas.repec.org/a/gam/jeners/v18y2025i3p509-d1574171.html
   My bibliography  Save this article

Semiconductor Material Damage Mechanisms Due to Non-Ionizing Energy in Space-Based Solar Systems

Author

Listed:
  • Anthony Peters

    (School of Engineering and Applied Science, Columbia University, New York, NY 10027, USA)

  • Matthias Preindl

    (School of Engineering and Applied Science, Columbia University, New York, NY 10027, USA)

  • Vasilis Fthenakis

    (School of Engineering and Applied Science, Columbia University, New York, NY 10027, USA
    Brookhaven National Laboratory, Upton, NY 11973, USA)

Abstract

Radiation impacts on space-based systems operating on various orbits are evaluated in this paper. Specifically, satellite operations in Low Earth Orbit (LEO), Medium Earth Orbit (MEO), and Geosynchronous Orbit (GEO) are analyzed. Special focus is given on quantifying the effect of high-energy particle space radiation on materials used for critical power components, where component fault can lead to total mission failure. Methods, using multiple computational platforms for the quantification of non-ionizing energy loss (NIEL) and displacement damage dose (DDD), are used to assess semiconductor damage at specific orbital altitudes. Detailed simulations were conducted for Gallium Arsenide Indium Phosphide (GaInP/GaAs/Ge) solar cells with various cover glass thicknesses, and the survivability of GaInP/GaAs/Ge cells was compared with that of Si cells. It was assessed that radiation exposure due to high-energy protons at 10,000 km is more prevalent than 20,000 km orbits and that electron bombardment is a major electronic damage culprit. For MEO at 10,000 km, MEO at 20,000 km, and GEO at 36,000 km, we determined the 1-year maximum power (Pmax) losses due to protons to be 23%, 8%, and 1% and losses due to electrons to be 11%, 14%, and 10%. Total integrated spectra Pmax losses for those altitudes are 25%, 16%, and 10%, respectively.

Suggested Citation

  • Anthony Peters & Matthias Preindl & Vasilis Fthenakis, 2025. "Semiconductor Material Damage Mechanisms Due to Non-Ionizing Energy in Space-Based Solar Systems," Energies, MDPI, vol. 18(3), pages 1-16, January.
  • Handle: RePEc:gam:jeners:v:18:y:2025:i:3:p:509-:d:1574171
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/1996-1073/18/3/509/pdf
    Download Restriction: no

    File URL: https://www.mdpi.com/1996-1073/18/3/509/
    Download Restriction: no
    ---><---

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jeners:v:18:y:2025:i:3:p:509-:d:1574171. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.