Author
Listed:
- Erxin Zhao
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
These authors contributed equally to this work.)
- Yongshuai Gong
(Three Gorges Corporation, Science and Technology Research Institute, Beijing 101199, China
These authors contributed equally to this work.)
- Yixin Dong
(Three Gorges Corporation, Science and Technology Research Institute, Beijing 101199, China)
- Wanlei Dai
(Microquanta Semiconductor Co., Ltd., Hangzhou 310027, China)
- Chou Liu
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China)
- Tinghuan Yang
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China)
- Nan Wu
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China)
- Ye Yang
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China)
- Zheng Zhang
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China)
- Chenqing Tian
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China)
- Buyi Yan
(Microquanta Semiconductor Co., Ltd., Hangzhou 310027, China)
- Dongxue Liu
(Three Gorges Corporation, Science and Technology Research Institute, Beijing 101199, China)
- Lu Zhang
(Microquanta Semiconductor Co., Ltd., Hangzhou 310027, China)
- Tianqi Niu
(Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China)
Abstract
Flexible perovskite solar cells (F-PSCs) have the advantages of high power-per-weight, solution processability, and bending durability and have emerged as a competitive photovoltaic technology for various applications. As the core electron transport layer (ETL) in n-i-p-type device configurations, the solution-processed SnO 2 generally suffers from serious defect stacking on films, compromising the charge transport properties and the performance of resulting devices. Herein, we proposed a media-filling strategy to optimize the contact quality at the buried interface by introducing Al 2 O 3 nanoparticles on the SnO 2 surface. Rather than forming a compact insulating layer, the Al 2 O 3 can fill the grain boundaries of SnO 2 and smooth the substrate surface. Optimized interfacial contact under careful concentration control can rationally minimize the contact area of the perovskite with the surface imperfections of SnO 2 to mitigate trap-assisted charge recombination. Furthermore, the reduced surface roughness of SnO 2 facilitates the uniform deposition and oriented growth of upper perovskite film. As a result, the target F-PSCs achieved an impressive efficiency of 23.83% and retained 80% of the initial performance after 5000 bending cycles at a radius of four mm.
Suggested Citation
Erxin Zhao & Yongshuai Gong & Yixin Dong & Wanlei Dai & Chou Liu & Tinghuan Yang & Nan Wu & Ye Yang & Zheng Zhang & Chenqing Tian & Buyi Yan & Dongxue Liu & Lu Zhang & Tianqi Niu, 2025.
"Buried Interface Smoothing Boosts the Mechanical Durability and Efficiency of Flexible Perovskite Solar Cells,"
Energies, MDPI, vol. 18(1), pages 1-13, January.
Handle:
RePEc:gam:jeners:v:18:y:2025:i:1:p:174-:d:1559874
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