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Array of Graphene Solar Cells on 100 mm Silicon Wafers for Power Systems

Author

Listed:
  • Syed M. Rahman

    (Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA)

  • Md R. Kabir

    (Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA)

  • Tamzeed B. Amin

    (Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA)

  • James M. Mangum

    (Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA)

  • Ashaduzzaman

    (Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA)

  • Paul M. Thibado

    (Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA)

Abstract

High electrical conductivity and optical transparency make graphene a suitable candidate for photovoltaic-based power systems. In this study, we present the design and fabrication of an array of graphene-based Schottky junction solar cells. Using mainstream semiconductor manufacturing methods, we produced 96 solar cells from a single 100 mm diameter silicon wafer that was precoated with an oxide layer. The fabrication process involves removing the oxide layer over a select region, depositing metal contacts on both the oxide and bare silicon regions, and transferring large-area graphene onto the exposed silicon to create the photovoltaic interface. A single solar cell can provide up to 160 μA of short-circuit current and up to 0.42 V of open-circuit voltage. A series of solar cells are wired to recharge a 3 V battery intermittently, while the battery continuously powers a device. The solar cells and rechargeable battery together form a power system for any 3-volt low-power application.

Suggested Citation

  • Syed M. Rahman & Md R. Kabir & Tamzeed B. Amin & James M. Mangum & Ashaduzzaman & Paul M. Thibado, 2024. "Array of Graphene Solar Cells on 100 mm Silicon Wafers for Power Systems," Energies, MDPI, vol. 17(23), pages 1-9, November.
    • Handle: RePEc:gam:jeners:v:17:y:2024:i:23:p:5895-:d:1528138
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