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Modeling of Changes in the Resistivity of Semi Insulating Gallium Phosphide under the Influence of Lighting

Author

Listed:
  • Karol Piwowarski

    (Faculty of Electronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland)

  • Witold Kaczmarek

    (Faculty of Electronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland)

  • Marek Suproniuk

    (Faculty of Electronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland)

  • Bogdan Perka

    (Faculty of Electronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland)

  • Piotr Paziewski

    (Faculty of Electronics, Military University of Technology, gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland)

Abstract

The article presents the results of a simulation of changes in gallium phosphide (GaP) resistivity under the influence of lighting. The adopted model of the defect structure is presented along with the defect parameters. Initial conditions created on the basis of a tested material sample, labeled GaP-1, made of monocrystals of semi-insulating gallium phosphide (SI GaP), are presented. The simulation methodology and the created model of the kinetics equations are described. As a result of the simulation, the values of the photocurrent and the electron-hole pair generation coefficient G were assigned to data obtained experimentally depending on the carrier lifetime coefficient τ . Changes in resistivity and concentration of electrons and holes in the bands for gallium phosphide with a structure consisting of five defects are presented. The proposed simulation method can be used to calculate switch-on and -off times and photocurrent values for the semiconductor materials used to construct PCSS (photoconductive semiconductor switches) and other electronic devices.

Suggested Citation

  • Karol Piwowarski & Witold Kaczmarek & Marek Suproniuk & Bogdan Perka & Piotr Paziewski, 2023. "Modeling of Changes in the Resistivity of Semi Insulating Gallium Phosphide under the Influence of Lighting," Energies, MDPI, vol. 16(4), pages 1-10, February.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:4:p:1725-:d:1062930
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