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Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking

Author

Listed:
  • Walid Issa

    (Electrical Engineering Department, Sheffield Hallam University, Sheffield S1 1WB, UK)

  • Jose Ortiz Gonzalez

    (School of Engineering, University of Warwick, Coventry CV4 7AL, UK)

  • Olayiwola Alatise

    (School of Engineering, University of Warwick, Coventry CV4 7AL, UK)

Abstract

A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in modular multi-level converters as well as other topologies. In this paper, a novel gate driver circuit capable of driving series-connected SiC MOSFETs for high voltage applications is proposed. The primary advantage of the proposed design is that a single gate driver was used to switch all the series devices. The circuit used switching capacitors to sequentially charge and discharge device gate capacitances during switching and enable a negative turn-off voltage to avoid device coupling from Miller-capacitive feedback effects. With the proposed gate driver design and appropriate component values selection, avalanche breakdown due to voltage divergence during switching transients could be avoided with only a minor imbalance in the top device. Simulations and experimental measurements showed that the zero-current turn-off transition of all switches was achieved, and this approved the validity of the design.

Suggested Citation

  • Walid Issa & Jose Ortiz Gonzalez & Olayiwola Alatise, 2022. "Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking," Energies, MDPI, vol. 15(20), pages 1-20, October.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:20:p:7768-:d:948549
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    Cited by:

    1. Olayiwola Alatise & Arkadeep Deb & Erfan Bashar & Jose Ortiz Gonzalez & Saeed Jahdi & Walid Issa, 2023. "A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability," Energies, MDPI, vol. 16(11), pages 1-25, May.

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