Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal models often take the chip active area as a uniform heat source to obtain a victual junction temperature ( T vj ). In this paper, a discrete distributed heat source model combined with a thermal network model based on the sublayer division strategy is proposed to achieve an accurate temperature distribution description along the chip vertical path. Taking a 1700 V/3600 A IGBT module as an example, the proposed model can evaluate the short-duration transient temperature distribution along the chip vertical path and the error is less than 2 °C compared with the finite element model. Meanwhile, the model is applied to a single short-duration transient timescale and multi-timescale systems separately, and the simulation speed is increased by more than 80 times and 297 times, which verifies its validity and accuracy.