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Effect of Radio-Frequency Power on the Composition of BiVO 4 Thin-Film Photoanodes Sputtered from a Single Target

Author

Listed:
  • Jiaqi Liu

    (Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, Japan)

  • Kazuya Tajima

    (Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, Japan)

  • Imane Abdellaoui

    (Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, Japan)

  • Muhammad Monirul Islam

    (Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, Japan
    Alliance for Research on the Mediterranean and North Africa (ARENA), University of Tsukuba, Tsukuba 305-8573, Ibaraki, Japan)

  • Shigeru Ikeda

    (Department of Chemistry, Konan University, Kobe 658-8501, Hyogo, Japan)

  • Takeaki Sakurai

    (Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, Japan)

Abstract

BiVO 4 films were fabricated by radio frequency (RF) sputtering from a single target. The deposited BiVO 4 films were found to be rich in Bi, and the reason for the Bi-richness was investigated. It was inferred from the Monte Carlo simulation that, during sputtering, the transfer process of target atoms through argon gas played a major role in this phenomenon. The transfer process resulted in an imbalanced ratio of Bi and V, arising from the difference in atom mass and interaction radius. The high RF power was found to be effective in adjusting the Bi/V ratio, influencing the sputtering yield. This type of preferential sputtering was maintained by the diffusion of target atoms from the bulk to the surface. BiVO 4 films with monoclinic scheelite crystal structures were obtained at high RF power values and found to exhibit photocatalytic performances beneficial for photoanodic applications.

Suggested Citation

  • Jiaqi Liu & Kazuya Tajima & Imane Abdellaoui & Muhammad Monirul Islam & Shigeru Ikeda & Takeaki Sakurai, 2021. "Effect of Radio-Frequency Power on the Composition of BiVO 4 Thin-Film Photoanodes Sputtered from a Single Target," Energies, MDPI, vol. 14(8), pages 1-10, April.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:8:p:2122-:d:533716
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