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A Curvature Compensation Technique for Low-Voltage Bandgap Reference

Author

Listed:
  • Jie Shen

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    Schools of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China)

  • Houpeng Chen

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    Shanghai Technology Development and Entrepreneurship Platform for Neuromorphic and AI SoC, Shanghai 200090, China)

  • Shenglan Ni

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    Schools of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China)

  • Zhitang Song

    (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

Abstract

Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient current) and ICTAT (negative temperature coefficient current) to the output resistance, the first-order compensation bandgap voltages can be obtained. Meanwhile, the third high-order compensation current is also superimposed on the same resistance. We make use of the collector current of the bipolar transistor to compensate for the nonlinear term of V BE . The simulation results show that TC (temperature coefficient) of the first circuit reference could be reduced from 29.1 × 10 −6 /°C to 5.71 × 10 −6 /°C over the temperature range of −25 to 125 °C after temperature compensation. The second one could be reduced from 17 × 10 −6 /°C to 5.22 × 10 −6 /°C.

Suggested Citation

  • Jie Shen & Houpeng Chen & Shenglan Ni & Zhitang Song, 2021. "A Curvature Compensation Technique for Low-Voltage Bandgap Reference," Energies, MDPI, vol. 14(21), pages 1-12, November.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:21:p:7193-:d:670350
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