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Source/Load-Pull Noise Measurements at K a Band

Author

Listed:
  • Sergio Colangeli

    (Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy)

  • Walter Ciccognani

    (Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy)

  • Patrick Ettore Longhi

    (Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy)

  • Lorenzo Pace

    (Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy)

  • Antonio Serino

    (Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy)

  • Julien Poulain

    (OMMIC SAS, 2 Rue du Moulin, 94453 Limeil Brévannes, France)

  • Rémy Leblanc

    (OMMIC SAS, 2 Rue du Moulin, 94453 Limeil Brévannes, France)

  • Ernesto Limiti

    (Electronics Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Roma, Italy)

Abstract

This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significant marginal improvement (as compared to forward measurements only) it is expected that the device under test should appreciably deviate from unidirectionality. For this reason, the source/load-pull technique is applied to frequencies at which the considered devices are still usable but their reverse noise factor exhibits a measurable dependence on the output terminations. Details on the test bench set up to the purpose, covering the 20–40 GHz frequency range, are provided. A characterization campaign on a 60 nm gate length, 4 × 35 µm GaN-on-Si HEMT fabricated by OMMIC is illustrated.

Suggested Citation

  • Sergio Colangeli & Walter Ciccognani & Patrick Ettore Longhi & Lorenzo Pace & Antonio Serino & Julien Poulain & Rémy Leblanc & Ernesto Limiti, 2021. "Source/Load-Pull Noise Measurements at K a Band," Energies, MDPI, vol. 14(18), pages 1-15, September.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:18:p:5615-:d:630779
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