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Characterization of Potential-Induced Degradation and Recovery in CIGS Solar Cells

Author

Listed:
  • Solhee Lee

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
    Equal contribution authorship.)

  • Soohyun Bae

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
    National Agenda Research Division, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
    Equal contribution authorship.)

  • Se Jin Park

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Jihye Gwak

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

  • JaeHo Yun

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

  • Yoonmook Kang

    (Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul 02841, Korea)

  • Donghwan Kim

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Young-Joo Eo

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

  • Hae-Seok Lee

    (Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul 02841, Korea)

Abstract

The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S) 2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

Suggested Citation

  • Solhee Lee & Soohyun Bae & Se Jin Park & Jihye Gwak & JaeHo Yun & Yoonmook Kang & Donghwan Kim & Young-Joo Eo & Hae-Seok Lee, 2021. "Characterization of Potential-Induced Degradation and Recovery in CIGS Solar Cells," Energies, MDPI, vol. 14(15), pages 1-12, July.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:15:p:4628-:d:605209
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    Citations

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    Cited by:

    1. Mohamed Derbeli & Cristian Napole & Oscar Barambones & Jesus Sanchez & Isidro Calvo & Pablo Fernández-Bustamante, 2021. "Maximum Power Point Tracking Techniques for Photovoltaic Panel: A Review and Experimental Applications," Energies, MDPI, vol. 14(22), pages 1-31, November.
    2. Oyeniyi A. Alimi & Edson L. Meyer & Olufemi I. Olayiwola, 2022. "Solar Photovoltaic Modules’ Performance Reliability and Degradation Analysis—A Review," Energies, MDPI, vol. 15(16), pages 1-28, August.
    3. HyunJung Park, 2022. "Inorganic Nanocrystal Solar Cells," Energies, MDPI, vol. 15(15), pages 1-2, July.

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