Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiF x ), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium fluoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also beneficial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiF x encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band offset to explore the consequence of work function in the LiF x as a carrier selective contact layer. We were able to achieve a maximum power conversion efficiency (PEC) of 23.74%, fill factor (FF) of 82.12%, J sc of 38.73 mA cm −2 , and V oc of 741 mV by optimizing the work function and thickness of LiF x layer.