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Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference

Author

Listed:
  • Zhijun Li

    (School of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, China)

  • Zuoxing Wang

    (School of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, China)

  • Trillion Zheng

    (School of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, China)

  • Hong Li

    (School of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, China)

  • Bo Huang

    (Power Supply Business Unit, Global Power Technology Co., Ltd., Beijing 100192, China)

  • Tiancong Shao

    (School of Electrical Engineering, Institute of Power Electronics and Electric Traction, Beijing Jiaotong University, Beijing 100044, China)

Abstract

Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power density, inherited from the high-speed switching feature. However, high-speed switching also induces gate-source voltage interference, which impacts the overall character of the conversion system. This paper considered the impact of gate-source voltage interference on loss, revealing an efficiency optimization for all-SiC PWM rectifiers. Firstly, this paper theoretically investigated the mechanism of improving the conversion system efficiency by using the 4-pin Kelvin packaged SiC MOSFETs. Then, based on the industrial product case study, loss distribution, using different package styles, was quantitatively analyzed. Finally, experiment test results verified the efficiency improvement of the PWM rectifier with the 4-pin Kelvin package SiC MOSFETs.

Suggested Citation

  • Zhijun Li & Zuoxing Wang & Trillion Zheng & Hong Li & Bo Huang & Tiancong Shao, 2020. "Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference," Energies, MDPI, vol. 13(6), pages 1-17, March.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:6:p:1421-:d:334043
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