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GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System

Author

Listed:
  • Hanyoung Bu

    (Department of Electrical Engineering, Konkuk University, Seoul 05029, Korea)

  • Younghoon Cho

    (Department of Electrical Engineering, Konkuk University, Seoul 05029, Korea)

Abstract

This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noise immunity and the reduction of parasitic components in system design. In addition, the high dv/dt in motor drive systems leads to voltage spike at a motor input terminal and leakage current through a motor chassis. Accordingly, a gate drive circuit consists of devices with a high common mode transient immunity. A printed circuit board was designed to minimize parasitic inductance, which was analyzed by performing simulations. To mitigate the dv/dt of the voltage applied to the motor and the leakage current, a dv/dt filter and a sine-wave filter were utilized as an output filter of the matrix converter. The effectiveness of each filter was verified by driving an induction motor.

Suggested Citation

  • Hanyoung Bu & Younghoon Cho, 2020. "GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System," Energies, MDPI, vol. 13(4), pages 1-14, February.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:4:p:971-:d:323585
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    Cited by:

    1. Loreine Makki & Marc Anthony Mannah & Christophe Batard & Nicolas Ginot & Julien Weckbrodt, 2021. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs," Energies, MDPI, vol. 14(13), pages 1-16, June.

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