Author
Listed:
- Yujin Jung
(Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)
- Kwan Hong Min
(Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)
- Soohyun Bae
(Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
National Agenda Research Division, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea)
- Yoonmook Kang
(Department of Energy Environment Policy and Technology, KU-KIST Green School, Graduate School of Korea University, Seoul 02841, Korea)
- Donghwan Kim
(Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)
- Hae-Seok Lee
(Department of Energy Environment Policy and Technology, KU-KIST Green School, Graduate School of Korea University, Seoul 02841, Korea)
Abstract
In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the P max point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.
Suggested Citation
Yujin Jung & Kwan Hong Min & Soohyun Bae & Yoonmook Kang & Donghwan Kim & Hae-Seok Lee, 2020.
"Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer,"
Energies, MDPI, vol. 13(21), pages 1-11, November.
Handle:
RePEc:gam:jeners:v:13:y:2020:i:21:p:5783-:d:440171
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