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A Novel Method to Achieve Selective Emitter Using Surface Morphology for PERC Silicon Solar Cells

Author

Listed:
  • Minkyu Ju

    (School of Electronic, Electrical Engineering, Korea National University of Transportation, Chungju 27469, Korea)

  • Jeongeun Park

    (School of Electronic, Electrical Engineering, Korea National University of Transportation, Chungju 27469, Korea)

  • Young Hyun Cho

    (School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea)

  • Youngkuk Kim

    (School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea)

  • Donggun Lim

    (School of Electronic, Electrical Engineering, Korea National University of Transportation, Chungju 27469, Korea)

  • Eun-Chel Cho

    (School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea)

  • Junsin Yi

    (School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea)

Abstract

Recently, selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In this study, we presented a novel technique for the SE formation by controlling the surface morphology of Si wafers. SEs were formed simultaneously, that is, in a single step for the doping process on different surface morphologies, nano/micro-surfaces, which were formed during the texturing processes; in the same doping process, the nano- and micro-structured areas showed different sheet resistances. In addition, the difference in sheet resistance between the heavily doped and shallow emitters could be controlled from almost 0 to 60 Ω/sq by changing the doping process conditions, pre-deposition and driving time, and temperature. Regarding cell fabrication, wafers simultaneously doped in the same tube were used. The sheet resistance of the homogeneously doped-on standard micro-pyramid surface was approximately 82 Ω/sq, and those of the selectively formed nano/micro-surfaces doped on were on 62 and 82 Ω/sq, respectively. As a result, regarding doped-on selectively formed nano/micro-surfaces, SE cells showed a J SC increase (0.44 mA/cm 2 ) and a fill factor (FF) increase (0.6%) with respect to the homogeneously doped cells on the micro-pyramid surface, resulting in about 0.27% enhanced conversion efficiency.

Suggested Citation

  • Minkyu Ju & Jeongeun Park & Young Hyun Cho & Youngkuk Kim & Donggun Lim & Eun-Chel Cho & Junsin Yi, 2020. "A Novel Method to Achieve Selective Emitter Using Surface Morphology for PERC Silicon Solar Cells," Energies, MDPI, vol. 13(19), pages 1-14, October.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:19:p:5207-:d:424301
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    References listed on IDEAS

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    1. Basu, Prabir Kanti & Cunnusamy, Jessen & Sarangi, Debajyoti & Boreland, Mathew Benjamin, 2014. "Novel selective emitter process using non-acidic etch-back for inline-diffused silicon wafer solar cells," Renewable Energy, Elsevier, vol. 66(C), pages 69-77.
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