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Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

Author

Listed:
  • Akihiro Takahashi

    (Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan)

  • Haibin Wang

    (Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan)

  • Takeshi Fukuda

    (Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan)

  • Norihiko Kamata

    (Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan)

  • Takaya Kubo

    (Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan)

  • Hiroshi Segawa

    (Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
    Department of General Systems Studies, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan)

Abstract

We constructed ZnO/PbS quantum dot (QD) heterojunction solar cells using liquid-phase ligand exchange methods. Colloidal QD solutions deposited on ZnO-dense layers were treated at different temperatures to systematically study how thermal annealing temperature affected carrier transport properties. The surface of the layers became dense and smooth as the temperature approached approximately 80 °C. The morphology of layers became rough for higher temperatures, causing large grain-forming PbS QD aggregation. The number of defect states in the layers indicated a valley-shaped profile with a minimum of 80 °C. This temperature dependence was closely related to the amount of residual n-butylamine complexes in the PbS QD layers and the active layer morphology. The resulting carrier diffusion length obtained on the active layers treated at 80 °C reached approximately 430 nm. The solar cells with a 430-nm-thick active layer produced a power conversion efficiency (PCE) of 11.3%. An even higher PCE is expected in solar cells fabricated under optimal annealing conditions.

Suggested Citation

  • Akihiro Takahashi & Haibin Wang & Takeshi Fukuda & Norihiko Kamata & Takaya Kubo & Hiroshi Segawa, 2020. "Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods," Energies, MDPI, vol. 13(19), pages 1-11, September.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:19:p:5037-:d:418926
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    References listed on IDEAS

    as
    1. Yiming Cao & Alexandros Stavrinadis & Tania Lasanta & David So & Gerasimos Konstantatos, 2016. "The role of surface passivation for efficient and photostable PbS quantum dot solar cells," Nature Energy, Nature, vol. 1(4), pages 1-6, April.
    2. Min-Jae Choi & F. Pelayo García de Arquer & Andrew H. Proppe & Ali Seifitokaldani & Jongmin Choi & Junghwan Kim & Se-Woong Baek & Mengxia Liu & Bin Sun & Margherita Biondi & Benjamin Scheffel & Grant , 2020. "Cascade surface modification of colloidal quantum dot inks enables efficient bulk homojunction photovoltaics," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
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