Author
Listed:
- Tian Pu
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
- Honglie Shen
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
- Chaofan Zheng
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
- Yajun Xu
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
- Ye Jiang
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
- Quntao Tang
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
- Wangyang Yang
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
- Chunbao Rui
(Phono Solar Technology Co. Ltd., Nanjing 210000, China)
- Yufang Li
(Collage of Material Science & Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics and Astronautics, Nanjing 210000, China)
Abstract
The absence of an effective texturing technique for diamond-wire sawn multi-crystalline silicon (DWS mc-Si) solar cells has hindered commercial upgrading from traditional multi-wire slurry sawn silicon (MWSS mc-Si) solar cells. In this work, we present a novel method for the removal of diamond-wire-sawn marks in a multi-crystalline silicon wafer based on metal assisted chemical etching process with Cu/Ag dual elements and nano-structure rebuilding (NSR) treatment to make a uniform inverted pyramid textured structure. The temperature effect of NSR solution was systematically analyzed. It was found that the size of the inverted pyramid structure and the reflectance became larger with the increase of the NSR treatment temperature. Furthermore, the prepared unique inverted pyramid structure not only benefited light trapping, but also effectively removed the saw-marks of the wafer at the same time. The highest efficiency of 19.77% was obtained in solar cells with an inverted pyramid structure (edge length of 600 nm) fabricated by NSR treatment at 50 °C for 360 s, while its average reflectance was 16.50% at a 400–900 nm wavelength range.
Suggested Citation
Tian Pu & Honglie Shen & Chaofan Zheng & Yajun Xu & Ye Jiang & Quntao Tang & Wangyang Yang & Chunbao Rui & Yufang Li, 2020.
"Temperature Effect of Nano-Structure Rebuilding on Removal of DWS mc-Si Marks by Ag/Cu MACE Process and Solar Cell,"
Energies, MDPI, vol. 13(18), pages 1-7, September.
Handle:
RePEc:gam:jeners:v:13:y:2020:i:18:p:4890-:d:415389
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References listed on IDEAS
- Tang, Quntao & Shen, Honglie & Yao, Hanyu & Gao, Kai & Jiang, Ye & Li, Yufang & Liu, Youwen & Zhang, Lei & Ni, Zhichun & Wei, Qingzhu, 2019.
"Superiority of random inverted nanopyramid as efficient light trapping structure in ultrathin flexible c-Si solar cell,"
Renewable Energy, Elsevier, vol. 133(C), pages 883-892.
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