Research on the Equivalent Virtual Space Vector Modulation Output of Diode Clamped N -level Converter under Multi-Modulation Carrier Modulation

Diode-clamped multi-level converters have DC-side capacitors in series, which will lead to the unbalance of DC-side capacitor voltage, the distortion of the output waveform, the increase of total harmonic distortion (THD), and even the damage of switching devices, which will make the system inoperable. The proposal of virtual space vector pulse-width modulation (VSVPWM) realizes the balanced control of the capacitor voltage, but when the output level of converter increases, the implementation of VSVPWM becomes very complicated, and the amount of calculation also increases greatly, thus hindering its application in the multi-level circuit. Compared with VSVPWM, the carrier-based pulse-width modulation (CBPWM) is simple to operate and easy to implement. If the equivalent relationship between CBPWM and VSVPWM can be found, the application of VSVPWM can be generalized to any level, and the advantages of VSVPWM can be fully utilized. This paper aims to study the inner relationship of VSVPWM and the multi-modulation carrier CBPWM (MCBPWM). After strict theoretical analysis, the equivalent relationship of VSVPWM and MCBPWM in the three-level and four-level and converter is realized by injecting the zero-sequence component into the modulation waves. Furthermore, the equivalent relationship between VSVPWM and MCBPWM is deduced to the N -level converter. Finally, the correctness of the relevant theoretical analysis is verified by the experiment.