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10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Author

Listed:
  • Besar Asllani

    (SuperGrid Institute, 23 rue Cyprian CS 50289, 69628 Villeurbanne CEDEX, France)

  • Hervé Morel

    (Univ Lyon, ECL, INSA Lyon, Univ. Claude Bernard, F-69621 CNRS, France)

  • Luong Viêt Phung

    (Univ Lyon, ECL, INSA Lyon, Univ. Claude Bernard, F-69621 CNRS, France)

  • Dominique Planson

    (Univ Lyon, ECL, INSA Lyon, Univ. Claude Bernard, F-69621 CNRS, France)

Abstract

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm 2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

Suggested Citation

  • Besar Asllani & Hervé Morel & Luong Viêt Phung & Dominique Planson, 2019. "10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization," Energies, MDPI, vol. 12(23), pages 1-12, November.
    • Handle: RePEc:gam:jeners:v:12:y:2019:i:23:p:4566-:d:292526
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