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A Study on Improving Switching Characteristics According to a Circuit Analysis Technique in Converter Applications Using Gallium Nitride Field Effect Transistors

Author

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  • Tae-Kue Kim

    (Department of Electrical Engineering, Changwon National University, Changwon 51140, Korea)

Abstract

In this paper, we studied how the switching characteristics of a power conversion system could be improved using gallium nitride (GaN) devices. To this end, a circuit system applying GaN field effect transistors (FETs) was modeled to derive a mathematical differential equation, and the transfer function of the system was obtained through the modeled equation to propose the analysis model. The frequency response of the system where the GaN FET device was applied was analyzed through the proposed modeling circuit, and the method to compensate for characteristics of the system was proposed. The applied method and the proposed model were validated through the comparative analysis on the frequency responses before and after the frequency response. This study’s results were proposed that the problem occurring in systems with GaN FETs could be solved through this theoretical and systematic method.

Suggested Citation

  • Tae-Kue Kim, 2019. "A Study on Improving Switching Characteristics According to a Circuit Analysis Technique in Converter Applications Using Gallium Nitride Field Effect Transistors," Energies, MDPI, vol. 12(17), pages 1-20, August.
    • Handle: RePEc:gam:jeners:v:12:y:2019:i:17:p:3280-:d:261083
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