Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °C. The ohmic behavior was reached after annealing at 600 °C. High-resolution morphological and electrical mapping by conductive atomic force microscopy showed a flat surface for both contacts, with the presence of isolated hillocks, which had no significant impact on the contact resistance. Structural analyses indicated the formation of the Al 3 Ti and Al 3 Ta phases upon annealing. Furthermore, a thin interfacial TiN layer was observed in the Ti/Al/Ti samples, which is likely responsible for a lower barrier and a better specific contact resistance (ρ c = 1.6 × 10 −4 Ωcm 2 ) with respect to the Ta/Al/Ta samples (ρ c = 4.0 × 10 −4 Ωcm 2 ). The temperature dependence of the specific contact resistance was described by a thermionic field emission mechanism, determining barrier height values in the range of 0.58–0.63 eV. These results were discussed in terms of the different microstructures of the interfaces in the two systems.