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Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dI DS /dt

Author

Listed:
  • Delei Huang

    (School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China)

  • Guojun Tan

    (School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
    Xuzhou China Ming Driver and Automation Co. Ltd., Xuzhou 221112, China)

  • Chengfei Geng

    (School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China
    Xuzhou China Ming Driver and Automation Co. Ltd., Xuzhou 221112, China)

  • Jingwei Zhang

    (School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China)

  • Chang Liu

    (School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116, China)

Abstract

In this paper, a method of extracting the junction temperature based on the turn-on current switching rate ( dI DS /dt ) of silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) is proposed. The temperature dependence of dI DS /dt is analyzed theoretically, and experimentally to show that dI DS /dt increases with the rising junction temperature. In addition, other factors affecting dI DS /dt are also discussed by using the fundamental device physics equations and experiments. The result shows that the increase of the DC-link voltage V DC , the external gate resistance R G-ext , and the decrease of the driving voltage V GG can increase the temperature sensitivity of the dI DS /dt . A PCB (printed circuit board) Rogowski coil measuring circuit based on the fact that the SiC MOSFET chip temperature and dI DS /dt is estimated in a linear way is designed to obtain the junction temperature. The experimental results demonstrate that the proposed junction temperature extracting is effective.

Suggested Citation

  • Delei Huang & Guojun Tan & Chengfei Geng & Jingwei Zhang & Chang Liu, 2018. "Extraction of Junction Temperature of SiC MOSFET Module Based on Turn-On dI DS /dt," Energies, MDPI, vol. 11(8), pages 1-15, July.
    • Handle: RePEc:gam:jeners:v:11:y:2018:i:8:p:1951-:d:160369
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