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ZnS/SiO 2 Passivation Layer for High-Performance of TiO 2 /CuInS 2 Quantum Dot Sensitized Solar Cells

Author

Listed:
  • Hee-Je Kim

    (School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea)

  • Jin-Ho Bae

    (School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea)

  • Hyunwoong Seo

    (Department of Energy Engineering, Inje University, 197 Inje-ro, Gimhae-si, Gyeongsangnamdo 50834, Korea)

  • Masaharu Shiratani

    (Department of Electronics, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan)

  • Chandu Venkata Veera Muralee Gopi

    (School of Electrical and Computer Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea)

Abstract

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO 2 blocking layer was deposited on TiO 2 /CuInS 2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO 2 /CuInS 2 /ZnS/SiO 2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO 2 /CuInS 2 (2.15%) and TiO 2 /CuInS 2 /ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO 2 passivation layer on TiO 2 /CuInS 2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Suggested Citation

  • Hee-Je Kim & Jin-Ho Bae & Hyunwoong Seo & Masaharu Shiratani & Chandu Venkata Veera Muralee Gopi, 2018. "ZnS/SiO 2 Passivation Layer for High-Performance of TiO 2 /CuInS 2 Quantum Dot Sensitized Solar Cells," Energies, MDPI, vol. 11(8), pages 1-9, July.
    • Handle: RePEc:gam:jeners:v:11:y:2018:i:8:p:1931-:d:159746
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