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Al0.3Ga0.7AsGaAs concentrator solar cells

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  • Eldallal, G.M.
  • Abou-Elwafa, M.S.
  • Elgammal, M.A.
  • Bedair, S.M.

Abstract

An Al0.3Ga0.7AsGaAs tandem solar cell was fabricated in a commercial reactor which has been specially modified for dual operation of both atomic layer epitaxy (ALE) and metalorganic chemical vapor deposition (MOCVD) growth modes. The p-type and n-type dopants were carbon and silicon, respectively, and the required doping concentrations were achieved by optimizing growth conditions such as V/III ratio (mole ratio of group V atoms to group III atoms), exposure times to reactant gases, and growth temperatures. The current-voltage (I–V) characteristics indicate that, up to 53 Suns, the tunnel junction does not seem to result in any appreciable deterioration in the multijunction solar cell's performance. The measured efficiency increases with increasing solar concentration up to a point where a region of negative resistance starts to appear in the I–V characteristics.

Suggested Citation

  • Eldallal, G.M. & Abou-Elwafa, M.S. & Elgammal, M.A. & Bedair, S.M., 1995. "Al0.3Ga0.7AsGaAs concentrator solar cells," Renewable Energy, Elsevier, vol. 6(7), pages 713-718.
    • Handle: RePEc:eee:renene:v:6:y:1995:i:7:p:713-718
    DOI: 10.1016/0960-1481(95)00010-H
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