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Improvement of structural and optoelectrical properties by post-deposition electron beam annealing of ITO thin films

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  • Kim, Daeil

Abstract

Sn-doped In2O3 (ITO) thin films were deposited on a glass substrate with reactive RF magnetron sputtering and then post-deposition electro-annealed. The electron accelerating voltage was varied from 300 to 900 V, and the substrate temperature was increased to 250 °C with an electron accelerating voltage of 900 V for 20 min in a 4 × 10−1 Pa vacuum. As-deposited and ITO films electro-annealed at low energy (≤600 eV) were found to be in the amorphous phase, while ITO films electro-annealed at 900 eV showed diffraction peaks of the ITO (222) and (400) planes. As the electron accelerating voltage increased, the electrical resistivity decreased to as low as 6 × 10−4 Ωcm, and the mean optical transmittance also increased from 79 to 82% in the visible wavelengths. The electro-annealed films showed a higher figure of merit (1.8 × 10−3 Ω−1) than the as-deposited ITO films (6.7 × 10−3 Ω−1), indicating that electro-annealed ITO films have better optoelectrical performance than as-deposited films.

Suggested Citation

  • Kim, Daeil, 2011. "Improvement of structural and optoelectrical properties by post-deposition electron beam annealing of ITO thin films," Renewable Energy, Elsevier, vol. 36(2), pages 525-528.
    • Handle: RePEc:eee:renene:v:36:y:2011:i:2:p:525-528
    DOI: 10.1016/j.renene.2010.06.031
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    References listed on IDEAS

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    1. Chae, J.H. & Kim, Daeil, 2010. "Effect of the Cu underlayer on the optoelectrical properties of ITO/Cu thin films," Renewable Energy, Elsevier, vol. 35(1), pages 314-317.
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