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A new energy efficient, environment friendly and high productive texturization process of industrial multicrystalline silicon solar cells

Author

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  • Basu, P.K.
  • Dhasmana, H.
  • Udayakumar, N.
  • Thakur, D.K.

Abstract

A new texturization process based on a uniform, isotropic and slow removal of silicon, using a composition of sodium hydroxide (NaOH) and sodium hypochlorite (NaOCl) solution at an elevated temperature is developed recently for multicrystalline silicon solar cells. This process is applied in optimized condition in regular industrial production line and it immediately replaces the old popular industrial process of texturization using a combination of NaOH solution, alcoholic NaOH solution and hydrochloric acid solution in different steps at a higher temperature. Also the gain in solar cell efficiency at global AM1.5 spectrum, 1 SUN intensity condition is nearly 10% in final value. In addition, it has become finally an energy efficient and environment friendly texturization process for large area multicrystalline silicon solar cells for commercial use. In this paper the cost effectiveness and environment friendly aspects of the proposed process have been studied in detail along with the surface texture analysis of wafers with SEM and AFM micrographs to substantiate the reasons behind the above facts.

Suggested Citation

  • Basu, P.K. & Dhasmana, H. & Udayakumar, N. & Thakur, D.K., 2009. "A new energy efficient, environment friendly and high productive texturization process of industrial multicrystalline silicon solar cells," Renewable Energy, Elsevier, vol. 34(12), pages 2571-2576.
  • Handle: RePEc:eee:renene:v:34:y:2009:i:12:p:2571-2576
    DOI: 10.1016/j.renene.2009.04.017
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    Cited by:

    1. Abdullah, M.F. & Alghoul, M.A. & Naser, Hameed & Asim, Nilofar & Ahmadi, Shideh & Yatim, B. & Sopian, K., 2016. "Research and development efforts on texturization to reduce the optical losses at front surface of silicon solar cell," Renewable and Sustainable Energy Reviews, Elsevier, vol. 66(C), pages 380-398.

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