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Temperature effect on the electrical properties of undoped and vanadium-doped ZnTe thin films

Author

Listed:
  • Hossain, M.S.
  • Islam, R.
  • Khan, K.A.

Abstract

Vanadium-doped ZnTe films of composition 0 to 10wt%V, were prepared onto glass substrate by e-beam evaporation of the element in vacuum at ∼8×10−4Pa. The effects of various deposition conditions on the electrical properties of the films have been studied in detail. The deposition rate of the ZnTe films was at about 2.05nms−1. X-ray diffraction (XRD) study shows that the as-deposited ZnTe films are amorphous in nature.

Suggested Citation

  • Hossain, M.S. & Islam, R. & Khan, K.A., 2008. "Temperature effect on the electrical properties of undoped and vanadium-doped ZnTe thin films," Renewable Energy, Elsevier, vol. 33(4), pages 642-647.
    • Handle: RePEc:eee:renene:v:33:y:2008:i:4:p:642-647
    DOI: 10.1016/j.renene.2007.04.003
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