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Numerical simulation of the impurity photovoltaic effect in silicon solar cells

Author

Listed:
  • Khelifi, S.
  • Verschraegen, J.
  • Burgelman, M.
  • Belghachi, A.

Abstract

Recently, the impurity photovoltaic effect (IPV) was proposed to improve the solar cell performance. Free electron–hole pairs can be generated in a two-step process involving an impurity level in the energy gap and two lower-energy photons: first electrons are optically excited from the valence band to the defect level and then from the defect level to the conduction band. The IPV effect will thus enhance the long-wavelength response of the cell.

Suggested Citation

  • Khelifi, S. & Verschraegen, J. & Burgelman, M. & Belghachi, A., 2008. "Numerical simulation of the impurity photovoltaic effect in silicon solar cells," Renewable Energy, Elsevier, vol. 33(2), pages 293-298.
    • Handle: RePEc:eee:renene:v:33:y:2008:i:2:p:293-298
    DOI: 10.1016/j.renene.2007.05.027
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    Cited by:

    1. Hu, E.T. & Yue, G.Q. & Zhang, R.J. & Zheng, Y.X. & Chen, L.Y. & Wang, S.Y., 2015. "Numerical simulations of multilevel impurity photovoltaic effect in the sulfur doped crystalline silicon," Renewable Energy, Elsevier, vol. 77(C), pages 442-446.
    2. Alvarez, A. & Cabeza, O. & Muñiz, M.C. & Varela, L.M., 2010. "Experimental and numerical investigation of a flat-plate solar collector," Energy, Elsevier, vol. 35(9), pages 3707-3716.

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