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Electrochemical deposition of Zn3P2 thin film semiconductors on tin oxide substrates

Author

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  • Soliman, M.
  • Kashyout, A.B.
  • Osman, M.
  • El-Gamal, M.

Abstract

Zn3P2 semiconductor thin films were prepared by electrodeposition technique form aqueous solutions. The deposition mechanism was investigated by cyclic voltammetry technique. Crystal structure, morphology and composition of as deposited and annealed Zn3P2 thin films grown on SnO2/glass substrates were determined by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. X-ray diffraction data indicated the formation of Zn3P2 as the predominant phase for both as-deposited and annealed films. The compositions of the deposited films were controlled by the bath temperature, deposition potential and Zn/P ratio in the solution.

Suggested Citation

  • Soliman, M. & Kashyout, A.B. & Osman, M. & El-Gamal, M., 2005. "Electrochemical deposition of Zn3P2 thin film semiconductors on tin oxide substrates," Renewable Energy, Elsevier, vol. 30(12), pages 1819-1829.
    • Handle: RePEc:eee:renene:v:30:y:2005:i:12:p:1819-1829
    DOI: 10.1016/j.renene.2005.01.004
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    Keywords

    Thin films; Semiconductors; Zn3P2; Electrodeposition;
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