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Preparation of In2O3:F thin films grown by spray pyrolysis technique

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  • Rozati, S.M.
  • Ganj, T.

Abstract

Transparent conducting fluorine doped indium oxide (In2O3:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (Ts=300 °C) showed no peaks of In2O3:F. In the useful range for deposition (i.e. 425–600 °C), the orientation of the films was predominantly [400]. For the 4500 Å thick In2O3:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Ω and average transmission in the visible wavelength rang (400–700 nm) was 88%.

Suggested Citation

  • Rozati, S.M. & Ganj, T., 2004. "Preparation of In2O3:F thin films grown by spray pyrolysis technique," Renewable Energy, Elsevier, vol. 29(10), pages 1665-1669.
    • Handle: RePEc:eee:renene:v:29:y:2004:i:10:p:1665-1669
    DOI: 10.1016/j.renene.2004.01.007
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    Keywords

    In2O3:F; Spray pyrolysis; Transparent-conducting oxide;
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