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FT-IR and XPS analysis of a-Si1-xGex:H thin films

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  • Makadsi, M.N.
  • Alias, M.F.A.
  • Essa, A.A.
  • AI-Azawi, H.R.

Abstract

Silicon–Germanium alloys have been prepared in an evacuated fused silica tube, and by thermal evaporation amorphous Si1-xGex:H thin films were deposited at different preparation conditions such as deposition temperature (Td), dopant concentration of aluminum (Al) and arsenic (As) and Ge content (x). Fourior transform infrared (FT-IR) investigations showed the existence of all the expected stretching and bending modes of (Si-H)n and (Ge-H)n. The X-ray photoemission spectroscopy (XPS) exhibited the existence of oxygen:carbon and hydrogen atoms on the Si-Ge surface which led to a shift in Si-2p and Ge-3p core level for pure and doped a-Si1-xGex:H thin films with aluminum and arsenic.

Suggested Citation

  • Makadsi, M.N. & Alias, M.F.A. & Essa, A.A. & AI-Azawi, H.R., 2003. "FT-IR and XPS analysis of a-Si1-xGex:H thin films," Renewable Energy, Elsevier, vol. 28(6), pages 975-984.
    • Handle: RePEc:eee:renene:v:28:y:2003:i:6:p:975-984
    DOI: 10.1016/S0960-1481(02)00061-7
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    Cited by:

    1. Neto, Abel F.G. & Marques, Francisco C. & Amador, Adriana T. & Ferreira, Amanda D.S. & Neto, Antonio M.J.C., 2019. "DFT and canonical ensemble investigations on the thermodynamic properties of Syngas and natural gas/Syngas mixtures," Renewable Energy, Elsevier, vol. 130(C), pages 495-509.

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