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Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

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  • Yakubu, H
  • Thilakan, P

Abstract

Thin films of indium tin oxide (ITO) have been deposited on fused quartz substrates by the spray deposition and rf-magnetron sputtering methods and their optical and electrical properties investigated. The junction properties of fabricated ITO/pCdTe and ITO/pInP structures have also been studied and their electrical properties presented. It is established that the deposited ITO films have a lattice constant of 10.14 Å and grow in cubic modifications along the (400) direction. Their transmittance value rises up to between 85% and 90% and extends well beyond the visible range of the spectrum. In the forward direction of the ITO/pCdTe structure, it is suggested that tunnelling dominated processes determine the current flow mechanism. Recombination currents at the interface region and thermionic-emission currents, however, dominate in the ITO/pInP structure at low bias and high bias respectively. The two structures can best be described as heterojunctions.

Suggested Citation

  • Yakubu, H & Thilakan, P, 2000. "Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates," Renewable Energy, Elsevier, vol. 20(2), pages 155-165.
    • Handle: RePEc:eee:renene:v:20:y:2000:i:2:p:155-165
    DOI: 10.1016/S0960-1481(99)00097-X
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