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Solution of efficiency loss in thinned silicon PERC solar cells

Author

Listed:
  • Yan, W.S.
  • Tan, X.Y.
  • Guan, L.
  • Zhou, H.P.
  • Yang, X.B.
  • Xiang, P.
  • Zhong, Z.C.

Abstract

It is predicted that crystalline silicon passivated emitter and rear contact (c-Si PERC) solar cells will reach 70% global market share with the cell thickness decreased to 150 μm within next 7 years. It is of critical importance to address efficiency loss in order to deliver high cost-effective thinned Si cells. Herein, we not only address the efficiency loss but also acquire an extra gain for 150 μm-thick cells via optical and electrical designs. By rear design of SiNx/SiOx film, light absorption loss at longer wavelengths is made up. Via front design of SiO2/SiNx/SiOx film, light absorption at short wavelengths is enhanced and simultaneously, open circuit voltage (Voc) is considerably improved. Compared with standard 180 μm-thick cells, the present design experimentally lead to average short circuit current density (Jsc) increase by 0.2 mA/cm2 and average Voc improvement by 9 mV. Compared with standard thick cells and un-designed 150 μm-thick cells, net absolute efficiency gains are up to 0.4% from 22.0% to 22.4% and 0.6% from 21.8% to 22.4%, respectively. Device simulations are conducted to explain the experimentally observed improvements. The present study demonstrates a technical solution to address the efficiency loss in the thinned c-Si PERC cells.

Suggested Citation

  • Yan, W.S. & Tan, X.Y. & Guan, L. & Zhou, H.P. & Yang, X.B. & Xiang, P. & Zhong, Z.C., 2021. "Solution of efficiency loss in thinned silicon PERC solar cells," Renewable Energy, Elsevier, vol. 165(P1), pages 118-124.
    • Handle: RePEc:eee:renene:v:165:y:2021:i:p1:p:118-124
    DOI: 10.1016/j.renene.2020.10.134
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