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Quantum efficiency of Cu2O electrode in photoelectrochemical cells with and without bias

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  • Khan, K.A.
  • Leung, Y.K.
  • Kos, J.F.

Abstract

The photoresponse of a p-type Cu2O film on copper is presented. The current-voltage characteristics exhibit a large photocurrent with an onset potential at ca. −0.2 V (S.C.E.). The electrode in the Cu2O/Pt biased cell shows high quantum efficiency which is approaching 100% for wavelength λ ≈ 300 nm. Studies show that even for potentials just slightly more negative than Von, the quantum efficiency is relatively large. This result may be explained either by a current doubling phenomena or could be due to a contribution to additional band gaps which may exist at higher energies. The overall high quantum efficiencies, moreover, can be obtained without the use of any external bias if a TiO2 counter electrode is used.

Suggested Citation

  • Khan, K.A. & Leung, Y.K. & Kos, J.F., 1997. "Quantum efficiency of Cu2O electrode in photoelectrochemical cells with and without bias," Renewable Energy, Elsevier, vol. 11(3), pages 293-298.
  • Handle: RePEc:eee:renene:v:11:y:1997:i:3:p:293-298
    DOI: 10.1016/S0960-1481(96)00132-2
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    1. Khan, K.A. & Leung, Y.K. & Kos, J.F., 1993. "Photoelectrochemical studies of Cu2O Photoelectrode coated with Au and SiO thin films," Renewable Energy, Elsevier, vol. 3(6), pages 701-703.
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