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Signatures of topological phase transitions in higher Landau levels of HgTe/CdTe quantum wells from an information theory perspective

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  • Calixto, Manuel
  • Cordero, Nicolás A.
  • Romera, Elvira
  • Castaños, Octavio

Abstract

We analyze the structure of low energy Hamiltonian eigenstates in zincblende heterostructures (like HgTe/CdTe quantum wells) near the gamma point, under magnetic fields, to characterize topological phase transitions (TPT) under an information-theoretic perspective. Using information markers like entanglement, quantum fluctuations, fidelity susceptibility, participation ration, area in phase space, etc., we realize that higher Landau levels (LL) feel the topological phase transition slightly displaced with regard to the edge state, thus leading to the concept of “higher Landau level |n|>0 TPT”, as “echoes” of the standard edge state n=0 TPT. We compute the critical magnetic field and the critical HgTe layer thickness at which these information measures of higher Landau levels undergo a structural change.

Suggested Citation

  • Calixto, Manuel & Cordero, Nicolás A. & Romera, Elvira & Castaños, Octavio, 2022. "Signatures of topological phase transitions in higher Landau levels of HgTe/CdTe quantum wells from an information theory perspective," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 605(C).
    • Handle: RePEc:eee:phsmap:v:605:y:2022:i:c:s0378437122006598
    DOI: 10.1016/j.physa.2022.128057
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    References listed on IDEAS

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    1. Wei-Feng Tsai & Cheng-Yi Huang & Tay-Rong Chang & Hsin Lin & Horng-Tay Jeng & A. Bansil, 2013. "Gated silicene as a tunable source of nearly 100% spin-polarized electrons," Nature Communications, Nature, vol. 4(1), pages 1-6, June.
    2. Romera, E. & Calixto, M. & Bolívar, J.C., 2018. "Information measures and topological-band insulator transitions in 2D-Dirac materials under external circularly polarized lasers, and static electric and magnetic fields," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 511(C), pages 174-181.
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