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Tsallis non-extensive statistics and multifractal analysis of the dynamics of a fully-depleted MOSFET nano-device

Author

Listed:
  • Antoniades, I.P.
  • Marinos, G.
  • Karakatsanis, L.P.
  • Pavlos, E.G.
  • Stavrinides, S.G.
  • Tassis, D.
  • Pavlos, G.P.

Abstract

In this study Tsallis non-extensive statistics and multifractal analysis for the physical description and understanding of the Random Telegraph Noise (RTN), observed in UTBB FD-SOI MOSFET current timeseries is presented. Specifically, we estimate the Tsallis q-triplet and q-entropy production, the Hurst exponent, the multifractal singular spectrum and other topological and dynamical characteristics of this MOSFET-current dynamics as a function of the drain voltage. The analysis shows the existence of microscopic intermittent turbulence and anomalous diffusion processes, underlying the noisy timeseries. The relevant results indicate the existence of a self-organized critical behavior manifested by a percolation mechanism and a fractional transport process. The multifractal character of the dynamics was demonstrated and explained by the maximization of the Tsallis q-entropy function. Final, our analysis revealed the existence of a non-equilibrium topological transition process, taking place when the drain voltage increases and satisfies the basic principles of Tsallis non-extensive statistical theory.

Suggested Citation

  • Antoniades, I.P. & Marinos, G. & Karakatsanis, L.P. & Pavlos, E.G. & Stavrinides, S.G. & Tassis, D. & Pavlos, G.P., 2019. "Tsallis non-extensive statistics and multifractal analysis of the dynamics of a fully-depleted MOSFET nano-device," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 533(C).
  • Handle: RePEc:eee:phsmap:v:533:y:2019:i:c:s0378437119310672
    DOI: 10.1016/j.physa.2019.121820
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    Cited by:

    1. Stavrinides, Stavros G. & Hanias, Michael P. & Gonzalez, Mireia B. & Campabadal, Francesca & Contoyiannis, Yiannis & Potirakis, Stelios M. & Al Chawa, Mohamad Moner & de Benito, Carol & Tetzlaff, Rona, 2022. "On the chaotic nature of random telegraph noise in unipolar RRAM memristor devices," Chaos, Solitons & Fractals, Elsevier, vol. 160(C).

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