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A random rule model of surface growth

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  • Mello, Bernardo A.

Abstract

Stochastic models of surface growth are usually based on randomly choosing a substrate site to perform iterative steps, as in the etching model, Mello et al. (2001) [5]. In this paper I modify the etching model to perform sequential, instead of random, substrate scan. The randomicity is introduced not in the site selection but in the choice of the rule to be followed in each site. The change positively affects the study of dynamic and asymptotic properties, by reducing the finite size effect and the short-time anomaly and by increasing the saturation time. It also has computational benefits: better use of the cache memory and the possibility of parallel implementation.

Suggested Citation

  • Mello, Bernardo A., 2015. "A random rule model of surface growth," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 419(C), pages 762-767.
    • Handle: RePEc:eee:phsmap:v:419:y:2015:i:c:p:762-767
    DOI: 10.1016/j.physa.2014.10.064
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    References listed on IDEAS

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    1. Reverberi, A.P. & Bruzzone, A.G. & Maga, L. & Barbucci, A., 2005. "Monte Carlo simulation of a ballistic selective etching process in (2+1) dimensions," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 354(C), pages 323-332.
    2. Tang, Gang & Xun, Zhipeng & Wen, Rongji & Han, Kui & Xia, Hui & Hao, Dapeng & Zhou, Wei & Yang, Xiquan & Chen, Yuling, 2010. "Discrete growth models on deterministic fractal substrate," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 389(21), pages 4552-4557.
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    Cited by:

    1. Lebovka, Nikolai I. & Cieśla, Michał & Vygornitskii, Nikolai V., 2024. "Sedimentation of a suspension of discorectangles," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 644(C).

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