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Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices

Author

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  • da Silva, Roberto
  • Wirth, Gilson I.
  • Brederlow, Ralf

Abstract

In this work, based on robust experimental results, we derive a novel theoretical probabilistic approach to model the low-frequency noise power S(f) in semiconductor devices. Using the proposed approach we obtained, analytically, the average of the integrated noise power Wp=∫fLfHS(f)df as a function of the frequency bandwidth [fL,fH], showing that 〈Wp〉∝ln2(fH/fL). The second moment and the relative error in Wp are also calculated. A numerical fit for the relative error was performed, showing that lower and upper bound estimates to noise power depend only on the ratio fH/fL.

Suggested Citation

  • da Silva, Roberto & Wirth, Gilson I. & Brederlow, Ralf, 2006. "Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 362(2), pages 277-288.
    • Handle: RePEc:eee:phsmap:v:362:y:2006:i:2:p:277-288
    DOI: 10.1016/j.physa.2005.11.014
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    Cited by:

    1. da Silva, Roberto & Brusamarello, Lucas & Wirth, Gilson I., 2010. "Statistical fluctuations for the noise current from random telegraph signals in semiconductor devices: Monte Carlo computer simulations and best fits," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 389(14), pages 2687-2699.

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