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Electronic properties of semiconductor Fibonacci quasi-periodic superlattices

Author

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  • Arriaga, J.
  • Velasco, V.R.

Abstract

We study the lowest conduction band and the highest valence band states of Fibonacci superlattices, formed by different slabs of AlAs and GaAs grown along the (0 0 1) direction. We employ an empirical tight-binding Hamiltonian including spin-orbit coupling together with the surface Green's function matching method. Second to sixth generation superlattices with different generating layer thicknesses have been analyzed. A selective localization of the spectral strength in the thicker GaAs slab is found for both valence and conduction band states in all the cases studied here.

Suggested Citation

  • Arriaga, J. & Velasco, V.R., 1997. "Electronic properties of semiconductor Fibonacci quasi-periodic superlattices," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 241(1), pages 377-381.
    • Handle: RePEc:eee:phsmap:v:241:y:1997:i:1:p:377-381
    DOI: 10.1016/S0378-4371(97)00110-6
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    1. Cahn, Anne H., 1984. "Mimicking Sisyphys: America's Countervailing Nuclear Strategy. By Louis Rene Beres. (Lexington, Mass.: D.C. Heath, 1983. Pp. xiii + 142. $19.95, cloth; $7.95, paper.)," American Political Science Review, Cambridge University Press, vol. 78(1), pages 265-265, March.
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