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Phase conjugation and spatial grating formation in amorphous chalcogenide thin films

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  • Haro-Poniatowski, E.
  • Fernández-Guasti, M.
  • Camacho-López, S.
  • Ruiz, F.

Abstract

We present experimental results of phase conjugation (PC) via degenerate four-wave mixing in amorphous Se, Ge10Se90 and Te7Se93 semiconductor thin films. Simultaneously to the PC signal a laser induced grating is formed. However the relief of the grating alone does not seem to explain the experimental results. Measurements of the PC intensity as a function of the film thickness suggest that besides the surface relief, volume effects have to be considered. The PC intensity is measured as a function of the irradiation intensity. The induced gratings are characterized by atomic force microscopy.

Suggested Citation

  • Haro-Poniatowski, E. & Fernández-Guasti, M. & Camacho-López, S. & Ruiz, F., 1994. "Phase conjugation and spatial grating formation in amorphous chalcogenide thin films," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 207(1), pages 329-333.
    • Handle: RePEc:eee:phsmap:v:207:y:1994:i:1:p:329-333
    DOI: 10.1016/0378-4371(94)90391-3
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    1. Lessard, Donald R., 1987. "Recapitalizing the third world : toward a new vision of commercial financing for less developed countries," Working papers 1946-87., Massachusetts Institute of Technology (MIT), Sloan School of Management.
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