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Resonant laser excitation and electron-hole kinetics of a semiconductor

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  • Henneberger, K.
  • Kühn, K.-H.

Abstract

Starting from the initial equations derived in a previous paper for an electron-hole plasma in a semiconductor resonantly excited in the interband absorption region by a monochromatic laser, the collision integrals of the Boltzmann equations for the quasiparticles as well as the nonlinearly defined optical functions are discussed in detail and related to each other. Explicit results are presented for the limiting case of linear absorption as well as for a stationary and homogeneous situation and compared with previous results in the literature. Especially for the latter case it is shown that it cannot provide a consistent understanding of the underlying physics and that consideration of inhomogeneous behaviour is essential.

Suggested Citation

  • Henneberger, K. & Kühn, K.-H., 1988. "Resonant laser excitation and electron-hole kinetics of a semiconductor," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 150(2), pages 439-454.
    • Handle: RePEc:eee:phsmap:v:150:y:1988:i:2:p:439-454
    DOI: 10.1016/0378-4371(88)90162-8
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    References listed on IDEAS

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    1. Mahler, Vincent A., 1981. "Britain, the European Community, and the developing Commonwealth: dependence, interdependence, and the political economy of sugar," International Organization, Cambridge University Press, vol. 35(3), pages 467-492, July.
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