IDEAS home Printed from https://ideas.repec.org/a/eee/matcom/v62y2003i3p367-375.html
   My bibliography  Save this article

An event bias technique for Monte Carlo device simulation

Author

Listed:
  • Kosina, H.
  • Nedjalkov, M.
  • Selberherr, S.

Abstract

In Monte Carlo (MC) simulations of semiconductor devices it is necessary to enhance the statistics in sparsely populated regions of interest. In this work the Monte Carlo method for stationary carrier transport, known as the Single-Particle MC method, is considered. It gives a solution to the stationary boundary value problem defined by the semi-classical Boltzmann equation (BE). Using a formal approach which employs the integral form of the problem and the Neumann series expansion of the solution, the Single-Particle MC method is derived in a formal way. The independent, identically distributed random variables of the simulated process are identified. Estimates of the stochastic error are given. Furthermore, the extension of the MC estimators to the case of biased events is derived. An event bias technique for particle transport across an energy barrier is developed and simulation results are discussed.

Suggested Citation

  • Kosina, H. & Nedjalkov, M. & Selberherr, S., 2003. "An event bias technique for Monte Carlo device simulation," Mathematics and Computers in Simulation (MATCOM), Elsevier, vol. 62(3), pages 367-375.
    • Handle: RePEc:eee:matcom:v:62:y:2003:i:3:p:367-375
    DOI: 10.1016/S0378-4754(02)00245-8
    as

    Download full text from publisher

    File URL: http://www.sciencedirect.com/science/article/pii/S0378475402002458
    Download Restriction: Full text for ScienceDirect subscribers only
    File URL: https://libkey.io/10.1016/S0378-4754(02)00245-8?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:eee:matcom:v:62:y:2003:i:3:p:367-375. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Catherine Liu (email available below). General contact details of provider: http://www.journals.elsevier.com/mathematics-and-computers-in-simulation/ .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.